Search results for "Electrical measurements"
showing 10 items of 21 documents
Custom measurement system for memristor characterisation
2021
Abstract A cheap, compact and customisable characterisation system for memristor devices, working between ± 10 V, is presented. SPICE (Simulation Program with Integrated Circuit Emphasis) simulations are performed to verify the circuit feasibility and a proper software is developed to drive the system. The potentiality of the realised system is tested by performing several electrical measurements on both Cu/HfO2/Pt memristors and two-terminals commercial devices.
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
2019
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30-200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10(20) at/cm(3). The implanted samples were annealed at high temperatures (1675-1825 degrees C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 degrees C, while this increase becomes more significant at 1825 degrees C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34 x 10(18)/cm(3) and m…
Electrical conductivity of magma in the course of crystallization controlled by their residual liquid composition.
2005
International audience; The electrical conductivity of a magma in the course of crystallization was experimentally investigated in the temperature range of 1350–1018°C. Large samples of basaltic composition with a homogeneous crystal content were synthesized in a gas mixing furnace at 1 atm pressure. The samples were analyzed by electron microprobe. The relative proportions of the phases as a function of temperature were determined. Depending on temperature, the phase assemblies included quenched silicate liquid, ±plagioclase, ±pyroxene, ±Fe-Ti oxides. The crystal content varied from 0 to 80 wt %. In response to partial crystallization, the residual liquid changed composition from basalt, t…
Structural and electrical study of the topological insulator SnBi2Te4 at high pressures
2016
We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at hi…
Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation
2019
An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…
Dielectrophoretic trapping of multilayer DNA origami nanostructures and DNA origami-induced local destruction of silicon dioxide
2015
DNA origami is a widely used method for fabrication of custom-shaped nanostructures. However, to utilize such structures, one needs to controllably position them on nanoscale. Here we demonstrate how different types of 3D scaffolded multilayer origamis can be accurately anchored to lithographically fabricated nanoelectrodes on a silicon dioxide substrate by DEP. Straight brick-like origami structures, constructed both in square (SQL) and honeycomb lattices, as well as curved "C"-shaped and angular "L"-shaped origamis were trapped with nanoscale precision and single-structure accuracy. We show that the positioning and immobilization of all these structures can be realized with or without thi…
Structural and conductivity study of the proton conductor BaCe(0.9−x)ZrxY0.1O(3−ı) at intermediate temperatures.
2009
International audience; The perovskite BaCe(0.9−x)ZrxY0.1O(3−ı) is prepared by solid-state reaction at 1400 ◦C and sintering at 1700 ◦C. It is characterised using X-ray diffraction, Raman spectroscopy and electrical measurements. A distortion fromthe cubic structure at roomtemperature is noticeable in the Raman spectra for 0.2 < x < 0.8, but not in the X-ray diffraction patterns. This work points out the rhombohedral nature of this distortion. Phase transitions are studied up to 600 ◦C. The direct current conductivity is measured as a function of oxygen partial pressure, and at a water vapour partial pressure of 0.015 atm. The total conductivity is resolved into an ionic and a p-type compon…
Theory of domain-wall magnetoresistance in metallic antiferromagnets
2020
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.
Electrical measurements in µ-EDM
2008
The phenomena occurring between the electrodes in electric discharge machining when manufacturing features on the micro-metre scale (µ-EDM) is not fully understood. Poor quantitative knowledge of the sources of variability affecting this process hinders the identification of its natural tolerance limits. Moreover, improvements in measuring systems contribute to the acquisition of new information that often conflicts with existent theoretical models of this process. The prime objective of this paper is to advance the experimental knowledge of µ-EDM by providing a measurement framework for the electrical discharges. The effects of the electrodes metallic materials (Ag, Ni, Ti, W) on the elect…
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …